Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Quantum, Neuromorphic & Unconventional Computing

Keywords: Nanomaterials

Keywords: Nanomaterials

Keywords: Nanodiamond and nanocarbon structures: materials and devices, Nano-optics, Nano-photonics & Nano-optoelectronics, Nanofabrication

Keywords: Nanodiamond and nanocarbon structures: materials and devices, Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Nano-optics, Nano-photonics & Nano-optoelectronics

Keywords: Nanodiamond and nanocarbon structures: materials and devices, Modeling & Simulation, Nanomaterials
Abstract: We use an envelope-function based simulation code to study the shot noise properties of graphene ribbons. Tworzydlo et al. predicted a peculiar behavior, as a function of the chemical potential or of the voltage applied to a backgate, for graphene samples with a large aspect ratio. A few experiments have been performed to validate such a prediction. On the basis of our simulations for ribbons with a realistic size, we conclude that the experimental results published until now are the result of the presence of disorder, rather than of the effect predicted by Tworzydlo et al.. Therefore, further work is needed to achieve an experimental observation of such a behavior. Our numerical results show that this should indeed be possible considering suspended graphene ribbons, with a sufficiently small voltage applied between the electrodes, and operating at very low temperature.

Keywords: Nanodiamond and nanocarbon structures: materials and devices

Keywords: Nanometrology & Characterization, Nanomaterials, Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Modeling & Simulation, Nanodiamond and nanocarbon structures: materials and devices
Abstract: The focus of this paper is to explore the implementation of resistive random-access memory (RRAM) cells in monolithic integration while addressing the reliability issues that can affect the efficiency of the memory. Specifically, the paper addresses the use of Nickel (Ni) interconnects and the high resistivity and temperatures resulting from Set/Reset switching. The paper proposes using carbon nanotubes (CNT) as an alternative material to improve signal and thermal integrity. The paper analyzes the electrothermal 1D1R structure and compares the conventional Ni metal electrodes to the CNT ones using a full 3D numerical model to provide electrical and thermal responses. The paper also introduces a new structure called 1D1R-1R1D that allows for resistive switching for all layers and increases the density of the crossbar memory while addressing problems with the conventional structure. The study enhances the accuracy of the model by considering the temperature-dependent electrical and thermal conductivity of the conductive filament and oxide. The paper analyzes the issues of voltage drop along wires and thermal crosstalk in both horizontal and vertical directions. The results of this study demonstrate the potential benefits of CNT interconnects for improving the thermal and signal integrity of RRAM crossbars.

Keywords: Nano-optics, Nano-photonics & Nano-optoelectronics, Nanomaterials, Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials

Keywords: Nanosensors & Nanoactuatuators, Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanofabrication
Abstract: Carbon nanotubes are a promising sensing material for bio-transduction devices, due to their unique electrical properties, nanosize, bio-compatibility, and their simple low cost processability. In this contribution, we present two classes of devices (i.e., electrolyte-gated field-effect transistor-based sensors and gas sensors) fabricated by facile and scalable spray deposition of water-based carbon nanotube inks. The developed sensing platforms have been employed for the detection of several analytes for different applications, including food quality assessment, physical activity monitoring, environmental monitoring, and detection of gaseous species.

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials

Keywords: Nanosensors & Nanoactuatuators, Nanofabrication, Nanomaterials

Keywords: Nanosensors & Nanoactuatuators, Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Nanoelectronics: Emerging material and device challenges in futuristic systems

Keywords: Nanosensors & Nanoactuatuators, Nano-acoustic Devices, Processes & Materials, Nanomaterials
Abstract: In this paper, we propose a simple, low-temperature sol-gel preparation method for depositing thin-film transistors with zinc oxide (ZnO) semiconductor channel layer under oxygen treatment. A plasma method at a low power of 18 W is used to surface treatments. A novel floating-gate (FG) thin-film transistor structure is developed for detecting acid and alkaline standard buffer solutions. The hydrogen ions and hydroxide ions in the buffer are varied, resulting in a slight bias, and this indirectly affected the dielectric layer of the sensor. The device displays excellent pH sensitivity with an average voltage sensitivity of 562.5 mv/pH at pH values from 2 to 10, with optimal pH stability. This results in changes in the output of the electrical curve, which enables pH detection, which can be considered an excellent pH sensor.

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Nanomaterials

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Quantum, Neuromorphic & Unconventional Computing, Nanoelectronics: Emerging material and device challenges in futuristic systems

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Nanoelectronics: Emerging material and device challenges in futuristic systems

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Nanomaterials, Nano-optics, Nano-photonics & Nano-optoelectronics
Abstract: One-dimensional semiconductors have emerged as a promising avenue for various electronic and optoelectronic applications due to their remarkable electrical and optical characteristics. Among them, the utilization of thin films composed of randomly oriented multiwalled tungsten disulfide (WS₂) nanotubes (NTs) has garnered significant attention. The unique structural properties of WS₂ nanotubes, along with their inherent semiconducting nature, make them an ideal candidate for photodetection in the visible-light spectrum. Indeed, the interdigitated photodetector based on WS₂ nanotubes exhibits exceptional sensitivity to visible light. The nanotube wide bandgap and unique surface-to-volume ratio enable efficient light absorption and charge generation upon photon absorption. This leads to a high signal-to-noise ratio and enhanced sensitivity, enabling the detection even at a low intensity of 10%. In this work, we demonstrate the potential of utilizing randomly oriented multiwalled WS₂ nanotubes as the active material in interdigitated photodetectors. The combination of their excellent electrical and optical properties, fast response time, and high sensitivity make them an appealing choice for visible-light detection.

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Nanofabrication, Nanomaterials
Abstract: Surface metallization of Silicon Nanowires (Si NWs) is a critical preparation technology for surface functionalization in biochemical sensing applications. Conventional metallization approaches rely on resist lift-off or non-selective protocols, which can lead to contamination and device damage. This work demonstrates a selective and resist-free surface metallization of suspended Si NW in a 3D device architecture via gold stencil lithography (SL). The approach involves control of the stencil-device gap via a thickness-controlled spacer, fabricated onto the stencil, to characterize and minimize geometrical blurring. The approach also prevents potential stencil-device contact-induced damage to suspended Si NW during SL. A significant improvement in spatial resolution for selective metallization onto NW is achieved compared to the state-of-the-art. Additionally, using the proposed approach with spacer thickness control, miniaturization of the stencil aperture dimensions to nanoscale raises the potential for selective metallization of Si NW down to sub-1 µm in-plane spatial resolution for highly sensitive biochemical sensor applications.

Keywords: Modeling & Simulation, Nanomagnetics, Spintronics

Keywords: Modeling & Simulation, Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanomaterials

Keywords: Modeling & Simulation

Keywords: Modeling & Simulation, Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials

Keywords: Modeling & Simulation
Abstract: Density functional theory (DFT) calculations can be regarded as a cornerstone in modern materials science to facilitate the materials design in nanotechnology. The introduction of nanoscale coherent twin-boundary defects into Cu nanowires can modify the atomic surface structure, reduce surface diffusion and further enhance the electromigration resistance. However, a more in-depth understanding of how the twin structure affect the electromigration behavior is still unclear. In this study, we discuss the reduction of Cu surface diffusivity using DFT elucidation. We focus on (1) the geometric effect and (2) the electronic structure effect on the surface diffusivity. We show that introducing twin structure can enhance diffusion barrier for Cu atomic migration around a specific twin concave junction. Therefore, a lower effective surface diffusivity can be achieved by around two orders of magnitude under 100 C, compared to twin-free systems. The root cause of varying the diffusivity of Cu surfaces mainly attribute to different coordination numbers of the surrounding Cu atoms. This study provides defect-engineering routes against diffusion-induced instability of Cu interconnects.

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Modeling & Simulation, Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials
Abstract: In this work, we propose a model that captures the dynamic characteristics of metal-insulator-semiconductor (MIS)-based non-volatile memory (NVM). The main focus of our study is to investigate the dependence of the barrier profile (and hence, the dominant transport mechanism) on the write speed and write voltage. We evaluate the results from our model with experimental data from literature. The model and its framework can provide useful insights into the design of MIS-based NVMs with optimized performance.

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Nano-optics, Nano-photonics & Nano-optoelectronics, Nanomagnetics

Keywords: Nanopackaging, Nanomaterials
Abstract: This paper provides a study of the electro-thermal properties of commercial films made by pressed Graphene Nano-Platelets (GNPs) in view of their use in electrical packaging applications. Specifically, the electrical and thermal conductivity values are estimated by means of an identification procedure based on the joint use of experimental characterization and numerical models. In particular, a novel and low-cost methodology is proposed and validated for the identification of thermal conductivity. A negative derivative of the electrical resistivity versus temperature is found for a wide range of operating temperatures.

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanomaterials

Keywords: Nanopackaging, Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials
Abstract: This study concerns the effect of Fe nanoparticles (NPs) additions on the structure and performance of Sn3.5Ag solder joints. Alternative to the commonly used strategy of mixing nanoparticles with the solder, various amounts (0.0 - 2 wt%) of Fe-NPs were added to the flux. Solder joints were then prepared by placing the NP-doped flux between the Sn-based solder foils and Cu substrates to achieve a proportionally high concentration of the NPs at the interface. The effect of Fe-nanoparticle additions on the formation and growth of interfacial intermetallic compounds (IMCs) and the microstructure of the bulk solder was investigated in as-reflow condition and after thermal aging up to 180°C and 360h. The results showed a reduced growth rate of the interfacial intermetallic phases (IMCs) of the solder joints prepared with NP-doped flux. Detailed structural and chemical analyses revealed the encountered interfacial reactions and dominancy of strong textural components for the Fe-NP-doped Sn-based solder joints.

Keywords: Nanopackaging, Nanofabrication, Commercializing nanotechnology
Abstract: More layers can be stacked in a three-dimensional integrated circuit (3D-IC) structure in the next generation of semiconductors. While stacking multiple layers, it is important to thin down every single layer to reduce the overall package size. Accurate selection of the backside etching stop layer can effectively help reduce the overall thickness of the 3D-IC structure and the silicon die thickness. In this study, a novel approach of different ion implantation-induced embedded layers as backside etching stop layers for ultra-thin die structures is presented. Nitrogen and boron ion implantation is used in silicon wafers, followed by a rapid thermal annealing (RTA) process and wet etch testing to determine the stable and higher etch selectivity. The results show that the final average etching rates of bare silicon and the boron-doped layers in KOH solution are 22.4 nm/s and 1.8 nm/s, respectively, with the etch selectivity of about 12.4. However, the nitrogen-doped layer keeps a similar etch rate in HNA solutions.

Keywords: Nanopackaging
Abstract: Reconfigurable Intelligent Surfaces (RIS) also known as Intelligent Reflecting Surfaces (IRS) often depend upon metasurfaces. These typically comprise of a large array of passive elements that can be fabricated to modulate reflection amplitude or phase or both to create tunable functions that are independently controlled. Various RIS are developed to improve spectral efficiency through ultrawideband antennas, enhanced beamforming with higher gain and bandwidth, spatial reconfigurability, selective and adjustable isolation, and other desired features. Several approaches to tune the RIS performance are being explored. This paper reviews the primary approaches and the benefit of emerging tunable nanomaterials in achieving such RIS functions. Designs with 1-bit and 6-bit phase shifters are discussed in the first part. Various opportunities with nanomaterials and nanodevices to induce such phase shifts are discussed in the last part of the paper.

Keywords: Nanomagnetics, Spintronics, Nanomaterials

Keywords: Quantum, Neuromorphic & Unconventional Computing, Modeling & Simulation, Nanomaterials

Keywords: Quantum, Neuromorphic & Unconventional Computing, Modeling & Simulation, Nanoelectronics: Emerging material and device challenges in futuristic systems

Keywords: Spintronics, Quantum, Neuromorphic & Unconventional Computing, Nanoelectronics: Emerging material and device challenges in futuristic systems
Abstract: Pattern recognition plays an important role in image recognition, classification, and information processing. In this work, energy energy-efficient spintronics-based pattern recognition design using in-memory computing architecture is presented. The paper presents a faster, energy-efficient, and area-efficient pattern recognition approach with three computational steps per pixel recognition process using the training and mean image size. The reduction in critical switching current owing to the voltage-controlled switching mechanism results in a 43% reduction in power consumption as compared to all-spin logic-based design approach for recognizing a 3x3 pixel image size pattern. This circuitry saves 33% area overhead when compared to conventional compute-in-memory (CiM) architectures based on spin orbit torque. The proposed CiM architectures can further be used for real-time pattern recognition for several applications.

Keywords: Quantum, Neuromorphic & Unconventional Computing, Modeling & Simulation
Abstract: We apply the Variational Quantum Eigensolver algorithm to the Anderson model in the atomic limit in order to investigate the Kondo behaviour of a single quantum dot. Simulations are performed both in ideal and noisy environ- ments in order to test the expressibility and trainability of the selected ansatz circuit over the chosen model. For the latter case we also implement an error mitigation scheme based on the conserved unitary symmetries of the Anderson Hamiltonian, finding a significant increase in the accuracy of the algorithm result

Keywords: Quantum, Neuromorphic & Unconventional Computing, Modeling & Simulation
Abstract: We perform an optimization study of quantum computing methods specifically suited for the investigation of spin models. Our method is in particular applied to the Heisenberg model defined on a small cluster, in the case where a term describing the coupling of the spins to an external magnetic field is also included. The problem is studied referring to a square geometry by means of a quantum computer using the Variational Quantum Eigensolver (VQE). Differently from previous VQE applications, we exploit the Bayesian optimization, often used in machine learning, as a minimization procedure. Moreover, a post-processing error mitigation is implemented to improve the accuracy of the results.

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Modeling & Simulation, Nanodiamond and nanocarbon structures: materials and devices

Keywords: Nanodiamond and nanocarbon structures: materials and devices, Quantum, Neuromorphic & Unconventional Computing

Keywords: Nanoenergy, Environment & Safety, Nanodiamond and nanocarbon structures: materials and devices, Nanomagnetics

Keywords: Nanodiamond and nanocarbon structures: materials and devices

Keywords: Nanodiamond and nanocarbon structures: materials and devices, Nanomaterials, Nanosensors & Nanoactuatuators

Keywords: Nanodiamond and nanocarbon structures: materials and devices, Nano-biomedicine, Nanomaterials

Keywords: Nanosensors & Nanoactuatuators, Nanofabrication, Nanomaterials

Keywords: Nanosensors & Nanoactuatuators, Nanomaterials, Nanoelectronics: Emerging material and device challenges in futuristic systems

Keywords: Nanosensors & Nanoactuatuators, Nano-optics, Nano-photonics & Nano-optoelectronics, Nanomaterials
Abstract: Bolometer type photodetectors with a high sensitivity in a wide range of wavelengths, ranging from the ultraviolet throughout the visible and up to the near infrared, have been fabricated utilizing the same type of multi-walled carbon nanotubes, but different matrices: in the first case a biological matrix based on tobacco cells has been used and in the second case high density polyethylene, a conventional polymer. The two investigated nanocomposite materials showed very different temperature coefficients, but both a clear negative temperature coefficient type behavior. It has been found that, despite the very different sample conductivities, both nanocomposites can be operated as photodetectors at room temperature. For the polyethylene based nanocomposite device, random-telegraph-noise has been found to limit the bolometer operation. Instead, for the tobacco cell based nanocomposite bolometer, the high sensitivity of the dark current to ambient temperatures leads to baseline fluctuations, but the photocurrent amplitude remains almost unaffected and a good signal-to-noise ratio has been obtained also for low light intensities.

Keywords: Nanosensors & Nanoactuatuators, Nanofabrication, Commercializing nanotechnology
Abstract: In this study, a new strategy "room temperature surface treatment stencil patterning method" is proposed to print silver nanowires (AgNWs) electrode patterns on Polydimethylsiloxane (PDMS) substrates and align AgNWs in the patterns by strain-release assembly method. By using a shadow mask and oxygen plasma treatment, proper wide AgNWs serpentine electrodes were fabricated, and the AgNWs were aligned in the same direction by the strain-release assembly method. The bending test results of the flexible strain sensor showed that the device change of the current was almost linear to the strain with a measurement factor of 6.4, that the device could deform about 17.5% with more than 1000 operations, and that the current of the device stabilized within 2 min. The results indicate that the device has excellent potential for flexible strain sensor applications.

Keywords: Nanosensors & Nanoactuatuators, MEMS/NEMS

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanosensors & Nanoactuatuators

Keywords: Nanodiamond and nanocarbon structures: materials and devices

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanomaterials
Abstract: We report the fabrication, electrical characterization, and digital applications of back-gated field-effect transistors with a single InAs nanowire as the conductive channel. The devices show n-type conduction with a field-effect mobility higher than 550 cm² V^-1 s^-1 at room temperature. The transfer characteristics exhibit hysteresis width that increases with increasing temperature. The temperature dependence of the electrical properties of InAs nanowires is investigated in the range from 290 to 340 K. The InAs nanowire transistors are exploited for nonvolatile memories and implemented in resistive-load circuits that operate as inverters. Our results are promising for the practical applications of InAs nanowires in the wide field of digital electronics.

Keywords: Nanoenergy, Environment & Safety

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanomaterials, Modeling & Simulation
Abstract: Due to the technological limitations, nanotechnology-enabled novel RF switches have emerged leading to research efforts in the telecommunications sector focusing on the gradual replacement of conventional switches with switches harnessing the unique properties of nanoelectronic devices such as memristors. Such novel switches have recently been fabricated and characterized, providing optimal behavior under high-frequency stimuli. In this study, we focus on the investigation and fabrication aspects of the numerous novel memristive switches based on 2D materials with prospects of enhancing the performance of memristor-based RF switches. The measurements presented demonstrate the efficacy of the fabricated devices for use in RF switches across diverse applications. More specifically, we highlight their suitability for RF applications, emphasizing their appropriateness for the intended functionality. The performance of the investigated switches is further evaluated with various key figures of merit. Through this presentation, we aim to contribute to the ongoing discussion on the application of memristor-based switches in RF circuits and systems, highlighting the potential advantages and addressing the need for more efficient and reliable alternatives. Additionally, we discuss various aspects of memristors and the implications of their wider adoption in the telecom sector.

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems

Keywords: Nanomaterials
Abstract: Rapidly growing field of flexible electronics calls for the coupling of modern nanomaterials and polymeric substrates. Silicon nanowires (SiNWs) grown by Vapor-Liquid-solid (VLS) mechanism are a preferred material for advanced electronic devices on account of their tunable properties and growth compatibility with any substrate. However, no report of direct growth of SiNWs on low operating temperature (~ 150 °C) polymeric substrates is available as yet. In the present work, synthesis of Silicon wires (SiWs) having an average diameter in the sub-micrometre range has been successfully attempted directly on a polymer sheet (Kapton) via the reduction of an Indium Tin Oxide (ITO) film to In-Sn metal alloy particles followed by the synthesis of SiWs without the substrate heating by Hot-Wire Chemical Vapor Processing technique. These SiWs were synthesized using a variation of the conventional VLS method wherein the hot wire plays a vital role for the growth of SiWs on low-melting-point (≤ 156 °C) In-Sn metal alloy particles. We therefore call this as the Hot-Wire-Enabled VLS (HW-VLS) mechanism. The surface layer of In-Sn metal alloy particles formed after the reduction exhibit two distinct size distributions with average particle sizes and densities to be ~ 58 nm, 4 x 109 cm-2 and ~310 nm, 2.2 x 108 cm-2. SiWs grown using these particles as a seed layer have a good density with an average diameter of ~ 550 nm and a high growth rate of ~ 7.4 nm/sec. The direct growth as proposed in the present scheme has an added advantage of facile and cost-effective fabrication with fewer processing steps.

Keywords: Modeling & Simulation
Abstract: Resistive-switching memory (RRAM) devices are an attractive technology for in-memory computing (IMC) to accelerate data-intensive tasks, such as deep neural network (DNN) inference. However, the RRAM characteristics are significantly affected by voltage and temperature dependences, as well as by statistical variability of the programmed state, leading to accuracy degradations of the computed results. Compact models of RRAM need to account for these dependencies and variations to allow for accurate simulations of IMC circuits and designtechnology co-optimization (DTCO). This work presents a compact model of RRAM devices that accounts for the conduction characteristics of various programmed states as a function of voltage and temperature. The compact model is validated through experimental measurements, and simulations of a simple use case of matrix-vector multiplication in a passive crosspoint array. The model can serve for the simulation and design of neural network accelerators based on RRAM technology.

Keywords: Modeling & Simulation, Quantum, Neuromorphic & Unconventional Computing, Nanomaterials
Abstract: Metallic nanogranular films display a complex dynamical response to a constant bias, typically showing up as a resistive switching mechanism which, in turn, could be used to create electrical components for neuromorphic applications. To model such a phenomenon we use a multiscale computational approach blending together (i) an ab initio treatment of the electric current at the nanoscale, (ii) a molecular dynamics approach dictating structural rearrangements, and (iii) a finite-element solution of the heat equation for heat propagation in the sample. We also consider structural changes due to electromigration which are modelled on the basis of experimental observations on similar systems. Within such an approach, we manage to describe some distinctive features of the resistive switching occurring in a nanogranular film and provide a physical interpretation at the microscopic level.

Keywords: Modeling & Simulation, Nanoelectronics: Emerging material and device challenges in futuristic systems

Keywords: Modeling & Simulation, Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanomaterials
Abstract: Acceleration is mandatory at both unit and process integration levels to save cost and reduce time to market. In this scenario, modeling and simulation can offer unprecedented opportunity to virtualize process-material-device space and accelerate PPACt, reducing the time to market and costs. In this paper, we will present a novel multiscale and multiphysics simulation platform for technology development virtualization, which connects process chamber modeling to electrical device prediction.

Keywords: Nanomaterials, Nanoelectronics: Emerging material and device challenges in futuristic systems, Nano-optics, Nano-photonics & Nano-optoelectronics

Keywords: Modeling & Simulation, Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Nanoelectronics: Emerging material and device challenges in futuristic systems
Abstract: This paper presents an analytical model for ballistic double-gate field-effect transistors based on monolayer phosphorene. Unlike other approaches, our formulation does not require an iterative solution nor uses special functions, making it well-suited for the design and analysis of integrated circuits. The obtained I–V curves are validated against numerical simulations, yielding excellent agreement.

Keywords: Nano-acoustic Devices, Processes & Materials, Nano-optics, Nano-photonics & Nano-optoelectronics, Nanoelectronics: Emerging material and device challenges in futuristic systems

Keywords: Nanomaterials, Nanomagnetics, Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials

Keywords: Nanoenergy, Environment & Safety, MEMS/NEMS, Modeling & Simulation

Keywords: Nano-acoustic Devices, Processes & Materials
Abstract: Magnesium would be expected to be applied to bioabsorbable stents as a metallic material because of its excellent biocompatibility and degradability. In this study, the corrosion behavior of pure magnesium was investigated by focusing on the crystal structure of the metallic material. As a result, the mass loss of pure magnesium round bars at a heat treatment temperature of 513 K was lower than that at 673 K. FE-SEM observation of the crystal structure showed that the grain size of the samples was coarser at a heat treatment temperature of 673 K than at 513 K. Furthermore, the specimens at a heat treatment temperature of 513 K and 673 K could be indicated that the perpendicular to the extrusion direction plane (xy-plane) with prismatic orientation in (101 ̅0) and (21 ̅1 ̅0) planes were more resistant to corrosion than the parallel to extrusion direction plane (xz-plane) with basal orientation in (0001) plane. Therefore, it has been considered that the crystallographic structure of pure magnesium influences the corrosion rate.

Keywords: Nano-acoustic Devices, Processes & Materials
Abstract: When used as photoacoustic transmitters, the design of polymer matrix nanocomposites can significantly impact the efficiency of the photon-to-acoustic conversion process. This efficiency is critical in applications using these transmitters as epiretinal prosthetic devices where delicate tissues can be damaged by excess energy if it is not effectively dissipated by naturally occurring biological processes. In these prosthetic devices, pulsed laser excitation of the nanocomposite produces acoustic wave emission that neuromodulates cells contained in the retina. For the nanocomposite materials studied in this work, the matrix is highly transparent at the excitation wavelengths of interest while the nanoparticles distributed in the bulk of the material serve as optical absorbers that photothermally heat the matrix when excited by laser pulses. Matrix thermal expansion launches ultrasonic waves that ultimately reach the retina and produce the desired neuromodulation. In this work, the efficiency of the photoacoustic process in these nanocomposites is analyzed with the aim of identifying critical laser and material parameters that affect the performance of these materials as epiretinal prosthetics.

Keywords: Nano-acoustic Devices, Processes & Materials, Nanomaterials, Nanofabrication

Keywords: Quantum, Neuromorphic & Unconventional Computing, Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanomaterials

Keywords: Quantum, Neuromorphic & Unconventional Computing, Nanofabrication, Nanometrology & Characterization

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Quantum, Neuromorphic & Unconventional Computing, Nano-optics, Nano-photonics & Nano-optoelectronics

Keywords: Quantum, Neuromorphic & Unconventional Computing, Nanofabrication

Keywords: Quantum, Neuromorphic & Unconventional Computing, Spintronics
Abstract: Image segmentation is essential for several computer vision applications, including object detection, autonomous driving, and medical imaging. Traditional image segmentation algorithms suffer due to computational inefficiency and memory bandwidth problems, limiting their real-time performance and accuracy. This work focuses on addressing these issues by enhancing image segmentation performance by leveraging a Processing-in-Memory (PIM) architecture based on Magnetic Random-Access Memory (MRAM) technology. The proposed approach optimizes data flow and memory access by integrating processing units into the MRAM memory array, resulting in better efficiency and real-time image segmentation capabilities. The proposed work introduces an MRAM-based PIM architecture to accelerate matrix multiplication operations in segmentation architectures. The study aims to assess and compare the effectiveness of the MRAMs for PIM based architecture for implementing segmentation models by analyzing their performance. The computationally intensive segmentation models such as UNet demonstrate a competitive edge in generating images with high correlation to ground truth images. PIM architecture with Voltage Gated Spin-Orbit Torque (VGSOT) has demonstrated substantial reduction in terms of energy, power, and latency by 99.99%, 99.97%, 35.34% respectively as compared to architectures using Phase Change Memory (PCM) crossbars in implementing segmentation inference operations.

Keywords: Spintronics, Quantum, Neuromorphic & Unconventional Computing
Abstract: A spiking neural network (SNN) comprises spiking neurons that mimic the information transfer in biological neurons using a series of time-dependent spikes. The spikes from such neurons are sparse in time and space, and event-driven. This facilitates the development of low-power neuromorphic hardware when coupled with bio-plausible local spike-timing-dependent plasticity (STDP) learning algorithm that can encode temporal information to solve complicated time-dependent pattern recognition problems. The SNN hardware implementation using novel memristive (spintronic) devices is an active area of research to achieve area and power efficiency. Spintronic devices pave for hardware-efficient implementation of complex neuromorphic algorithms such as STDP for in-situ learning. This work presents the implementation of STDP algorithms using spin-based synaptic devices. Moreover, using an unsupervised learning scheme, the paper presents an SNN for digit recognition that is based on the mechanism with increased biological plausibility with 3 different STDP learning rules. The results show the testing accuracy of the triplet-based STDP rule is 18.34%, 10.72%, 7.15%, and 3.53% higher than the pair-based STDP rule with 100, 250, 400, and 1600 excitatory neurons respectively. The energy with the presented device is reported as 300 fJ.

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials

Keywords: Nanomaterials, Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanofabrication

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanodiamond and nanocarbon structures: materials and devices, Nanomaterials

Keywords: Nanofabrication
Abstract: This work highlights the potential of advanced printing techniques, such as 3D, spray, screen, and inkjet printing, in revolutionizing the way of implementing an energy storage technology for a sustainable future. These additive manufacturing methods represent the new frontier in sustainable energy storage and powering technology for structural electronics systems by providing promising novel functionalities, efficiency improvements and reducing environmental impact of electronics systems.

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanofabrication, Nanomaterials

Keywords: Nanoenergy, Environment & Safety, Nanomaterials, Nanoelectronics: Emerging material and device challenges in futuristic systems
Abstract: The production of hazardous waste in the electronics industry poses significant environmental concerns. Sustainable electronic components, made of nanocomposite materials, have garnered attention for their promising electrical performance and reduced hazardous waste generation. This study focuses on the fabrication and characterization of supercapacitors by using eco-friendly nanomaterials. The results demonstrate that these devices serve as a viable alternative to conventional supercapacitors, offering high gravimetric capacitance, low equivalent series resistance, and robust endurance properties. The utilization of eco-friendly nanocomposite materials holds great potential for addressing environmental challenges and promoting sustainable practices in the electronics sector.

Keywords: Nano-optics, Nano-photonics & Nano-optoelectronics, Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanofabrication

Keywords: Nano-optics, Nano-photonics & Nano-optoelectronics

Keywords: Nano-optics, Nano-photonics & Nano-optoelectronics

Keywords: Nanomaterials

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Nano-optics, Nano-photonics & Nano-optoelectronics, Nanoelectronics: Emerging material and device challenges in futuristic systems
Abstract: Graphene FETs immobilized with some anions show extremely large modulation of the Fermi level upon light irradiation. The mechanism of the modulation is suggested to be the charge transfer between graphene and the anion, which makes photogating effect resulting from capacitive coupling of electrons or holes injection in the anion. We also found that the photo-response could be utilized as a chemical sensor.

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanomaterials
Abstract: An in-depth discussion of the transport mecha- nisms in ambipolar Ge nanowire (NW) Schottky barrier (SB) field-effect transistors (SBFETs) embedded in monolithic and crystalline Al-Ge-Al heterostructures is presented. Thereto, detailed bias spectroscopy in the temperature regime between T = 77.5 K and 400 K was conducted. In conjunction with the obtained activation energy maps, a highly transparent contact for holes due to charge carrier injection saturation by Fermi level pinning close to the valence band and gate induced thinning of the SB width was observed. In contrast, the thermionic- and field-emission mechanism limits the overall electron conduction, indicating a distinct SB for electrons. In this regime, nanoscaled Ge distinctly differs from its bulk counterpart and delivers a strong and reproducible negative differential resistance (NDR) at room-temperature (RT) followed by a sudden current increase indicating the onset of impact ionization above a specific threshold electric field.

Keywords: Nanoelectronics: Emerging material and device challenges in futuristic systems, Nanosensors & Nanoactuatuators, Nanomaterials

Keywords: Modeling & Simulation, Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Nanoelectronics: Emerging material and device challenges in futuristic systems
Abstract: We extend the versatile and efficient Nano Device Simulator methodology developed for Si and Ge-based devices to enable simulation of TMD-based MOSFETs based on the direct solution of the Boltzmann transport equation. The methodology addresses the most important aspects of carrier transport within the semi-classical theoretical framework. Fully embedded in a TCAD environment, the presented approach allows to investigate a myriad of different TMD device architectures and concepts.

Keywords: Modeling & Simulation

Keywords: Modeling & Simulation
Abstract: The electromagnetic properties and behavior of nanomaterials and nanomaterial-based devices are simulated using analytical models and numerical methods. Graphene nanomaterials are the most explored, with several different proposed applications. To design a graphene-based device that meets specific functional requirements, it is necessary to have reliable models that take into account the geometry of the device besides the properties of graphene. In this way, simulation of the response based on variations in geometrical parameters is possible. Among the existing techniques, finite element method for field analysis and device compact modeling for circuit simulators are here referred. In this paper, our design approach is presented, which begins with metamaterial and device modeling based on experimental data fitting and progresses to sensitivity analysis conducted using a factorial design of numerical experiments.

Keywords: Modeling & Simulation, Nanoelectronics: Emerging material and device challenges in futuristic systems, Spintronics

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Modeling & Simulation, Nanoelectronics: Emerging material and device challenges in futuristic systems
Abstract: The realm of plasmonic devices based on two-dimensional and layered materials promises us a way to bridge electronics and photonics, closing the THz gap. While giving rise to a wide range of new designs for nanodevices. Here we study the occurrence and behaviour of nonlinear plasma waves -- viz. solitary and localized chiral waves -- in two-dimensional materials and discuss the foreseeable applications. In particular, we consider a graphene structure as a unidirectional waveguide; where solitary waves arise from the interplay of Coulomb long-range interaction and quantum Bohm potential in the bulk. Secondly, we study localized plasmonic modes propagating along a magnetic domain wall, showing that such modes are topologically protected chiral waves.

Keywords: Nanomaterials

Keywords: Nanomaterials, Nanoenergy, Environment & Safety

Keywords: Nanomaterials, Nanoenergy, Environment & Safety

Keywords: Education in nanotechnology, Modeling & Simulation, Nanomaterials

Keywords: Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials, Nano-biomedicine, Nanomaterials

Keywords: Education in nanotechnology